Cyclotron-Resonance-Induced Nonequilibrium Phase Transition in-GaAs
- 12 August 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 55 (7) , 754-757
- https://doi.org/10.1103/physrevlett.55.754
Abstract
A thresholdlike behavior of the far-infrared photoconductivity due to cyclotron resonance and a drastic deviation of the cyclotron-resonance line shape from a Lorentzian has been observed in -GaAs at low temperatures by applying a high-power cw far-infrared laser. Both effects may consistently be explained in terms of generation-recombination-induced nonequilibrium phase transitions showing that, besides impact ionization of impurities, cyclotron resonance can critically control the conductivity of the semiconductors.
Keywords
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