GaAs monolithic circuit for millimeter-wave receiver application

1 January 1981

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. XXIV, 144-145
https://doi.org/10.1109/isscc.1981.1156197

Abstract

A 31GHz monolithic receiver prototype, using integrating mixer diodes and MESFETs on a GaAs substrate, will be described. The single monolithic chip exhibits a conversion gain of 4dB and a receiver noise figure of 11.5dB (SSB).

Keywords

GALLIUM ARSENIDE
MILLIMETER WAVE CIRCUITS
SCHOTTKY DIODES
FETS
MILLIMETER WAVE TECHNOLOGY
FREQUENCY
FABRICATION
PROTONS
MILLIMETER WAVE RADAR
PRODUCTION