The contour of an optimal field plate-an analytical approach
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (5) , 684-688
- https://doi.org/10.1109/16.2513
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- SiC power devices — Present status, applications and future perspectivePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrodeIEEE Transactions on Electron Devices, 1979
- Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitorsIEEE Transactions on Electron Devices, 1979
- Surface breakdown in silicon planar diodes equipped with field plateSolid-State Electronics, 1972
- Effect of surface fields on the breakdown voltage of planar silicon p-n junctionsIEEE Transactions on Electron Devices, 1967