Use of a scanning electron microscope for screening bipolar surface effects

1 December 1974

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 21 (6) , 383-386
https://doi.org/10.1109/tns.1974.6498957

Abstract

A method of screening bipolar transistors for total dose surface effects using a scanning electron microscope (SEM) is described. This screening technique is implemented by irradiation of a selected pattern of dice on each wafer. The electron-induced damage from the SEM is shown to correlate with equivalent total dose irradiations from a Co⁶⁰ source. It is also shown that the degradation of the selected dice is characteristic of the remaining dice on the wafer.

Keywords

SUP
TRANSISTORS
SCREENING BIPOLAR
SCANNING ELECTRON MICROSCOPE
WAFER
DICE
TOTAL DOSE

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