Schottky barriers on p-type silicon
- 1 January 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (1) , 71-75
- https://doi.org/10.1016/0038-1101(71)90049-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963
- Direct and Indirect Excitation Processes in Photoelectric Emission from SiliconPhysical Review B, 1962