Efficient Red-Emitting p-n Junctions Formed in GaP by Solution Growth of Thick Layers of p-Type Material on Vapor-Grown n-Type Substrates
- 1 May 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (6) , 2977-2978
- https://doi.org/10.1063/1.1656716
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- P-N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°CApplied Physics Letters, 1967
- Efficient Electroluminescence in GaP p-n Junctions Grown by Liquid-Phase Epitaxy on Vapor-Grown SubstratesJournal of Applied Physics, 1967
- Preparation and Properties of Solution-Grown Epitaxial p—n Junctions in GaPJournal of Applied Physics, 1966
- Injection electroluminescence at p-n junctions in zinc-doped gallium phosphideJournal of Physics and Chemistry of Solids, 1962