Trap-related effects in AlGaAs/GaAs HEMTs
- 1 January 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings G Circuits, Devices and Systems
- Vol. 138 (1) , 104-108
- https://doi.org/10.1049/ip-g-2.1991.0019
Abstract
Some AlGaAs/GaAs HEMTs display output resistance and transconductance frequency dispersions that are strongly dependent on the applied drain bias VDS. These frequency and bias dependences have been observed in devices showing a ‘kink’ effect in the DC current/voltage characteristics. All such phenomena appear to be closely correlated and, because of the presence of deep levels in the AlGaAs layer, may be correlated to DX centres. Electron trapping and detrapping times, which, at low VDS, are about 3 and 10μs, respectively, can be reduced by almost one order of magnitude by an increase in the drain voltage. Consequently, the related frequency-dependent phenomena disappear at frequencies higher than few megahertz.Keywords
This publication has 1 reference indexed in Scilit:
- An Investigation into the Parasitic Effects Affecting the Operation of HEMT-based ICsPublished by Springer Nature ,1989