Hybrid Photomultiplier Tubes Using Internal Solid State Elements
- 1 June 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 13 (3) , 46-53
- https://doi.org/10.1109/tns.1966.4324078
Abstract
A new family of photomultiplier tubes has been developed using silicon diodes and transistors as multiplying elements. For applications requiring low and medium gains these tubes offer several advantages over tubes utilizing ordinary dynode multiplication. These include ease of fabrication, mechanical ruggedness, reduced sensitivity to magnetic fields, and fast response. Diode structures have provided normal gains up to the theoretical maximum and have exhibited very short response times. In a few cases anomalously high diode gains have been observed, apparently as the result of induced avalanching near the diode front surface. Much greater gains have been obtained from various transistor structures with some sacrifice in the response time.Keywords
This publication has 3 references indexed in Scilit:
- The Evoscope—A Fixed-pattern Generator Using a Au-Si DiodePublished by Elsevier ,1966
- The Characteristics of Very Shallow Silicon JunctionsIEEE Transactions on Nuclear Science, 1966
- Avalanche Breakdown in SiliconPhysical Review B, 1954