Compositional Variation of Metallorganic Chemically Vapor Deposited SrTiO[sub 3] Thin Films along the Capacitor Hole Having a Diameter of 0.15 μm

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Abstract
Variations in the cation concentration ratio of metallorganic chemically vapor deposited SrTiO3SrTiO3 (STO) thin films along a capacitor hole having a diam of 0.15 μm, were investigated. Even under the deposition conditions that produce stoichiometric STO films on a nonpatterned wafer, the Sr/Ti ratio is greatly decreased along the depth direction of the hole. The degree of variation depended on the flow rate of the precursors. In some cases, a film having a Ti concentration of more than 90% was deposited at the bottom of the hole with a Ti concentration of less than 30% at the top of the hole. A plausible reason for the compositional variation was suggested on the basis of the decreased diffusion speed of the precursor molecules in the small sized holes. © 2001 The Electrochemical Society. All rights reserved.
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