Electron emission from diamond coated silicon field emitters

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Abstract
Polycrystalline diamond thin films have been formed on single crystal silicon field emitters using bias-enhanced nucleation in a microwave plasma chemical vapor deposition system. A diamond nucleation density greater than 1010/cm2 with small grain sizes (<25 nm) was achieved on the surfaces of silicon emitters with nanometer scale curvature. Field emission from these diamond coated silicon emitters exhibited significant enhancement compared to the pure Si emitters both in total emission current and stability. Using a Fowler–Nordheim analysis a very large effective emitting area of nearly 10−11 cm2 was obtained from the diamond coated Si emitters compared to that of uncoated Si emitters (10−16 cm2). This area was found to be comparable to the entire tip surface area.

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