Vertical smear noise model for MOS-type color imager
- 1 August 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (8) , 1407-1410
- https://doi.org/10.1109/t-ed.1985.22137
Abstract
The smear noise in an MOS imager was analyzed based on the three types of generation mechanisms: capacitive coupling, carrier diffusion, and light leakage. The measured smear performance was explained by these analyses. The results lead to the conclusion that the main cause of smear in an MOS imager is due to the component of light leakage.Keywords
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