Stress induced leakage current in ultra-thin gate oxides after constant current stress
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 145-148
- https://doi.org/10.1016/s0167-9317(97)00036-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Stress induced leakage currents in thin oxidesMicroelectronic Engineering, 1995
- Stress-induced leakage current in ultrathin SiO2 filmsApplied Physics Letters, 1994
- Electrical conduction in MOS capacitors with an ultra-thin oxide layerSolid-State Electronics, 1991
- High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1988