Conduction in Relaxation-Case Semiconductors

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Abstract
It is shown that the diffusion term cannot be neglected in the differential equations governing the relaxation case, even in the high-field limit. We present quantitative results of rigorous calculations including diffusion. Good agreement with experiments is obtained for reverse bias, including the typical sublinear region. In forward direction a superlinear region is found in disagreement with previous predictions of "recombinative space-charge injection."