In situ deposition of epitaxial PbZrxTi(1−x)O3 thin films by pulsed laser deposition

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Abstract
Epitaxial thin films of PbZrxTi(1−x)O3 (PZT) with 0≤x≤0.6 have been deposited in situ by pulsed laser deposition from stoichiometric targets onto 〈100〉 oriented single crystals of MgO and SrTiO3. Film composition was extremely sensitive to the substrate temperature and the oxygen deposition pressure. In a high (200–300 mTorr) oxygen ambient, phase‐pure 〈100〉 oriented PZT films (x=0.54) were formed at a substrate temperature of 550 °C on SrTiO3. On MgO, competition between formation of the ferroelectric phase and a nonferroelectric (pyrochlore) phase was observed for compositions near the morphotropic phase boundary (x∼0.54). Polycrystalline PZT films which were 70%–90% PZT were also deposited on Pt coated Si and GaAs under similar conditions.