Drain Voltage Scaling in Carbon Nanotube Transistors

Preprint

23 May 2003

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0305570

Abstract

While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in Off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the Off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.

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All Related Versions

Version 1, 2003-05-23, ArXiv
Published version: Applied Physics Letters, 83 (12), 2435.

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