Production and beam annealing of damagein carbon implanted Si. I
- 1 January 1978
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 36 (1-2) , 35-40
- https://doi.org/10.1080/00337577808233168
Abstract
The disorder profiles of 25, 50 and 70 keV C+ implants in Si are studied by proton backscattering, using the channelling effect technique. The implantation and the analysis were carried out at room temperature. The measured disorder profiles show reasonable agreement with theory. Annealing of the introduced disorder by proton bombardment is observed. Furthermore, different annealing behaviour of the disorder is observed for different primary energies of the C+ ions.Keywords
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