Burst and low-frequency generation-recombination noise in double-heterojunction bipolar transistors

1 July 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (7) , 277-279
https://doi.org/10.1109/EDL.1984.25916

Abstract

The low-frequency noise in a double-heterojunction bipolar transistor (DHBT) consisted of burst noise and generation-recombination g-r noise. The current dependence of the base burst noise with floating collector was of the form IB3and the current dependence of the collector g-r noise with HF short circuited base was as IC3/2. The centers involved in the noise generation had an activation energy of about 0.40 eV, with an indication of a second center of lower energy in the collector noise.

Keywords

LOW-FREQUENCY NOISE
NOISE GENERATORS
BIPOLAR TRANSISTORS
CIRCUIT NOISE
TEMPERATURE
FREQUENCY
DH-HEMTS
HAFNIUM
GALLIUM ARSENIDE
INTEGRATED CIRCUIT NOISE

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