Characterization of FeSe thin films prepared on GaAs substrate by selenization technique
Open Access
- 15 April 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (8) , 5177-5179
- https://doi.org/10.1063/1.365162
Abstract
FeSe thin films were prepared on GaAs(100) substrate by the selenization of Fe films using molecular-beam epitaxy. FeSe compound thin films were obtained at a substrate temperature above 380 °C. From the depth profiles of Fe and Se in the selenized film measured by Auger electron spectroscopy, it was confirmed that an FeSe layer with a constant ratio of Fe/Se was formed. The measured composition ratio of Fe/Se in the film was 1/3. It was different from the composition in Fe3Se4 or Fe7Se8, which is a stable bulk FeSe compound. From the measured M–H curve, it was found that the obtained FeSe film consisted of two phases with different magnetic properties.This publication has 3 references indexed in Scilit:
- MBE growth of single crystal α-Fe films on ZnSe (001) and (110)Journal of Crystal Growth, 1987
- A Neutron Diffraction Investigation of Fe3Se4.Acta Chemica Scandinavica, 1968
- On the Magnetocrystalline Anisotropy of Iron Selenide Fe7Se8Journal of the Physics Society Japan, 1967