Design optimization of ARROW-type diode lasers
- 1 November 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (11) , 1204-1206
- https://doi.org/10.1109/68.166943
Abstract
Antiresonant reflecting optical wavelength (ARROW)-type diode lasers have been optimized for high-power, single-spatial-mode operation. Calculated modal behavior predicts strong intermodal discrimination with low loss for the fundamental ARROW mode. Single-lobe far-field operation is obtained only when the high-index reflecting (antiresonant) cladding layers correspond to an optical thickness of lambda /sub 1/ (m+3/4), where lambda is the lateral (projected) wavelength of the leaky wave in the high-index layers, and m is an integer (m=0, 1,. . .). Experimental results include stable, single-spatial mode operation to 500-mW peak pulsed power and 300-mW CW power at an emission wavelength of 0.98 mu m.Keywords
This publication has 10 references indexed in Scilit:
- 0.3 W CW single-spatial-mode operation from large-core arrow-type diode lasersElectronics Letters, 1992
- Antiresonant reflecting optical waveguide-type, single-mode diode lasersApplied Physics Letters, 1992
- Resonant self-aligned-stripe antiguided diode laser arrayApplied Physics Letters, 1992
- High power 980 nm ridge waveguide lasers with etch-stop layerElectronics Letters, 1991
- 0.5 W CW diffraction-limited-beam operation from high-efficiency resonant-optical-waveguide diode-laser arraysElectronics Letters, 1991
- Phase-locked arrays of antiguides: model content and discriminationIEEE Journal of Quantum Electronics, 1990
- Loss reduction of an ARROW waveguide in shorter wavelength and its stack configurationJournal of Lightwave Technology, 1988
- Antiresonant reflecting optical waveguides for III-V integrated opticsElectronics Letters, 1987
- Antiresonant reflecting optical waveguides in SiO2-Si multilayer structuresApplied Physics Letters, 1986
- Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasersApplied Physics Letters, 1980