The behavior of p- and n-doped contacts in a space-charge depletion region
- 31 May 1960
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 1 (2) , 107-122
- https://doi.org/10.1016/0038-1101(60)90042-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- On the Injection of Carriers into a Depletion LayerJournal of Applied Physics, 1957
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953
- Space-Charge Limited Emission in SemiconductorsPhysical Review B, 1953
- Space-Charge Limited Hole Current in GermaniumPhysical Review B, 1953
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949