Monolayer control in the growth of (Al,Ga)Sb/GaSb single quantum wells: Application to the band offset and Γ–L crossover problems

1 January 1996

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (1) , 54-56
https://doi.org/10.1063/1.116755

Abstract

This letter reports the growth by molecular beam epitaxy of Al_xGa_1−xSb/GaSb single quantum wells on GaSb substrates. Barrier compositions and well thicknesses are determined in situ using reflection high energy electron diffraction. The luminescence energies of wells with width increasing by a two monolayer increment, with either an odd or even number of monolayers, are intercalated, further evidencing the thickness control. For pseudomorphic Al_xGa_1−xSb/GaSb heterostructures, a heavy hole valence band offset in meV of (275±75)x is estimated. For an Al barrier composition of 0.31, the confinement induced Γ–L crossover occurs at a well thickness of 12 monolayers.

Keywords

This publication has 0 references indexed in Scilit: