Reproducible Preparation of Homogeneous In1−xGaxP Mixed Crystals
- 1 November 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (9) , 348-349
- https://doi.org/10.1063/1.1653947
Abstract
A solution‐growth method was developed to obtain highly homogeneous In1−xGaxP mixed crystals. In this method, a GaP crystal was the source material which was placed in the high‐temperature portion of the In solution. An In1−xGaxP mixed crystal of a controlled composition crystallized in the low‐temperature portion of the solution. The temperature of the solution and the vapor pressure of phosphorous were maintained constant in order to obtain mixed crystals of a high homogeneity. An x‐ray analysis showed that the mixed crystals thus prepared were uniform within 0.01‐mole fraction.Keywords
This publication has 2 references indexed in Scilit:
- STIMULATED EMISSION IN In1 -xGaxPApplied Physics Letters, 1970
- BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYSApplied Physics Letters, 1968