Epitaxial Growth of Cubic SiC Films on Si Substrates by High Vacuum Chemical Vapor Deposition Using 1,3‐Disilabutane
- 1 April 1997
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 144 (4) , 1474-1476
- https://doi.org/10.1149/1.1837614
Abstract
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