Carrier lifetime in semiconductors for steady-state recombination conditions

1 June 1973

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 61 (6) , 793-794
https://doi.org/10.1109/PROC.1973.9160

Abstract

An extension of the Shockley-Read expression for steady-state lifetime is proposed for inhomogeneous nondegenerate semiconductors under a nonuniform external generation Gn(Gp) of electrons (holes) and in the presence of current flow. The special case of small disturbances in carrier density for a semiconductor with local electrical neutrality is also considered.

Keywords

CHARGE CARRIER LIFETIME
STEADY-STATE
RADIATIVE RECOMBINATION
SIGNAL GENERATORS
LOGIC DEVICES
BRIDGE CIRCUITS
POISSON EQUATIONS
GALLIUM ARSENIDE
DELAY EFFECTS
NETWORK ADDRESS TRANSLATION

This publication has 0 references indexed in Scilit: