High temperature 'variable range hopping' conductivity in silicon inversion layers
- 7 June 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (11) , L249-L253
- https://doi.org/10.1088/0022-3719/8/11/007
Abstract
The conductivity of n channel MOSFET devices has been measured in the temperature range 4.2K-1/3 indicative of a variable range hopping mechanism. The minimum metallic conductivity is found to vary linearly with the average separation of the oxide charge, contrary to prediction.Keywords
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