Characterization of Y 2 O 3 ‐ Stabilized ZrO2 Thin Films by Plasma‐Enhanced Metallorganic Chemical Vapor Deposition

1 September 1993

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 140 (9) , 2625-2629
https://doi.org/10.1149/1.2220874

Abstract

Yttria‐stabilized zirconia (YSZ) films were deposited on (100) silicon wafers by a plasma‐enhanced metallorganic chemical vapor deposition (PEMOCVD) process involving the application of vapor mixtures of bisdipivaloylmethanato yttrium, zirconium tetra‐t‐butoxide, and oxygen. From the x‐ray diffraction (XRD) and transmission electron microscopy (TEM) results, the as‐deposited YSZ films were found to be a single cubic phase and the preferred orientation of (100). Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) analyses were performed to determine the mole percentage in YSZ films and this result was compared with that obtained by Aleksandrov model using the lattice constant by x‐ray diffraction. The mole percentage in YSZ films obtained by AES and RBS showed a great deviation from those predicted by the Aleksandrov model.

Keywords

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