Field emission characteristics of defective diamond films
- 1 March 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (2) , 724-728
- https://doi.org/10.1116/1.589891
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Control of emission characteristics of silicon field emitter arrays by an ion implantation techniqueJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Low-threshold cold cathodes made of nitrogen-doped chemical-vapour-deposited diamondNature, 1996
- Calculation of electron field emission from diamond surfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Characterization of p-Type Silicon Field EmittersJapanese Journal of Applied Physics, 1994
- Field-dependence of the area-density of ‘cold’ electron emission sites on broad-area CVD diamond filmsElectronics Letters, 1993
- Determination of the optical constants of fine grained diamond layers on silicon substrates using curve-fitting proceduresDiamond and Related Materials, 1993
- Cold field emission from CVD diamond films observed in emission electron microscopyElectronics Letters, 1991
- Characterization of diamond films by Raman spectroscopyJournal of Materials Research, 1989
- Raman scattering characterization of carbon bonding in diamond and diamondlike thin filmsJournal of Vacuum Science & Technology A, 1988
- Microstructural Information From Optical Properties In Semiconductor TechnologyPublished by SPIE-Intl Soc Optical Eng ,1981