Lateral mode selection in semiconductor injection lasers

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Abstract
Various methods have been used to control the lateral modes of injection lasers. We report on lateral mode selection in continuous‐wave double‐heterojunction lasers using the differential diffraction losses of different modes at a narrow reflector stripe on one emitting facet. Power output curves and far‐field beam patterns scanned in the lateral (junction) plane are shown both before and after an antireflection coating was deposited on one facet except in a narrow stripe. The stripe defines the mode‐selecting reflective region. Calculations, based on a simple model of DH injection lasers, are made by estimating the magnitude of the effect. Output powers of 12 mW from one facet were obtained.