Influence of high-temperature annealing on performance of edge-defined film-fed growth silicon ribbon solar cells

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Abstract
Silicon ribbon with varying oxygen concentrations grown by the edge-defined film-fed growth technique has been annealed for periods of up to 1 h at 1200 °C prior to fabrication into solar cells. Low (<1×1016 atom/cc interstitial) oxygen content ribbon cell performance, which is characteristically depressed with respect to higher (∼5×1016 atom/cc interstitial) oxygen content ribbon, is improved by the anneal to levels approaching those observed in unannealed ribbon with the higher oxygen concentrations. The latter are essentially unaffected by the anneal. An explanation for ribbon cell property responses is proposed that is based on consideration of recombination effects associated with carbon microdefects.