Characterization of AuGe‐ and AuTe‐Based Ohmic Contacts on InAs n‐Channel High Electron Mobility Transistors
- 1 March 1997
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 144 (3) , 1067-1069
- https://doi.org/10.1149/1.1837532
Abstract
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