Photoacoustic Spectra on Laser-Annealed GaAs Surfaces

1 January 1983

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 22 (S3)
https://doi.org/10.7567/jjaps.22s3.199

Abstract

Photoacoustic (PA) spectra of n-type GaAs active layers implanted with 1×10¹⁵ Si⁺ cm^-2 at 100–180 keV followed by Q-switched ruby laser annealing at 25 nsec pulse width, 0.8 J·cm^-2 energy under various ambiences are presented. PA signals are reduced when the ambience of 1-bar air or Ar is changed for 100-bar Ar. The reduction is also observed in a series of samples with low dose levels of 5×10¹² Si⁺ cm^-2. These reductions are consistent with the trend of stoichiometrical improvements.

Keywords

SPECTRA
GAAS
PHOTOACOUSTIC
LASER ANNEALED
SUP
BAR

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