Deep wet etching of borosilicate glass using an anodically bonded silicon substrate as mask

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Abstract
Deep wet etching of borosilicate glass using an anodically bonded silicon substrate as mask is presented. Depths of m or more can be achieved very easily. The structured glass wafer can be bonded anodically on the same side to another silicon wafer, after having removed the bonded silicon mask. A lateral underetching 1.5 times larger than the depth was measured. An application using this masking technique is also presented. It consists of using the anodically bonded frame of a resonant silicon structure as a mask for deep glass etching to increase the gap between the glass wall and the resonator, thus yielding a high Q-factor.

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