Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVD
- 1 September 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 91 (4) , 515-526
- https://doi.org/10.1016/0022-0248(88)90119-4
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Extended infrared response of InAsSb strained-layer superlatticesApplied Physics Letters, 1988
- III–V strained layer supperlattices for long-wavelength detector applications: Recent progressJournal of Vacuum Science & Technology A, 1987
- Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength rangeApplied Physics Letters, 1987
- The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVDJournal of Crystal Growth, 1986
- Growth of InAs1−xSbx (0<x<1) and InSb-InAsSb superlattices by molecular beam epitaxyApplied Physics Letters, 1985
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984
- Reduction of dislocation densities in heteroepitaxial III−V VPE semiconductorsJournal of Applied Physics, 1975
- Cathodoluminescence of compositionally graded layers of GaAs1−xPxJournal of Applied Physics, 1975
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Fracture of brittle epitaxial films under the influence of misfit stressMaterials Research Bulletin, 1972