Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon
- 15 March 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (6) , 3741-3744
- https://doi.org/10.1063/1.1445499
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Electronic properties of light-induced recombination centers in boron-doped Czochralski siliconJournal of Applied Physics, 1999
- Density-functional thermochemistry. III. The role of exact exchangeThe Journal of Chemical Physics, 1993
- Discrete Variational Xα Cluster Calculations. I. Application to Metal ClustersJournal of the Physics Society Japan, 1978