Studies on new chemically deposited photoconducting antimony trisulphide thin films
- 1 March 1992
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 26 (1-2) , 117-136
- https://doi.org/10.1016/0927-0248(92)90131-8
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Novel chemical preparative route for semiconducting MoSe2 thin filmsJournal of Materials Chemistry, 1991
- MoS2−xOx solid solutions in thin films produced by rf-sputter-depositionJournal of Materials Research, 1990
- MoS3 Thin Film Cathodes Prepared by Chemical Vapor DepositionJournal of the Electrochemical Society, 1989
- Three-dimensional quantum-size effect in chemically deposited cadmium selenide filmsPhysical Review B, 1987
- Photochemistry of colloidal semiconductors. Onset of light absorption as a function of size of extremely small CdS particlesChemical Physics Letters, 1986
- Electrical conduction in coevaporated antimony trisulphide filmsSolid State Communications, 1980
- Solution Growth of CdSe and PbSe FilmsJournal of the Electrochemical Society, 1980
- Dielectric properties of Sb2S3 at microwave frequeniciesPhysica Status Solidi (a), 1976
- Inner-orbital binding-energy shifts of antimony and bismuth compoundsInorganic Chemistry, 1973
- Studies on sintered photoconductive layers of antimony trisulphideJournal of Physics D: Applied Physics, 1970