Impurity redistribution during epitaxial growth
- 1 May 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (3) , 517-540
- https://doi.org/10.1007/bf02654687
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic PressureJapanese Journal of Applied Physics, 1980
- High-temperature carrier transport in n-type epitaxial GaAsSolid-State Electronics, 1980
- Impurity gradients caused by surface states and substrate doping in epitaxial GaAsApplied Physics Letters, 1977
- Atomic Diffusion in SemiconductorsPublished by Springer Nature ,1973
- Diffusion of Antimony Out of Germanium and Some Properties of the Antimony-Germanium SystemPhysical Review B, 1957
- Holes and electronsPhysics Today, 1950