Visible a‐SiC:H P‐I‐N light emitting diodes with hot‐carrier tunneling injection layers

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Abstract
The a‐SiC:H thin‐film light‐emitting diodes (TFLED's) with a basic p‐i‐n structure and the higher mobility‐gap a‐SiC:H hot‐carrier tunneling injection (HTI) layers inserted at the p‐i and/or i‐n interfaces to improve the luminance have been fabricated and characterized. The high mobility‐gap a‐SiC:H HTI‐ and i‐layers were deposited by feeding C2H2 and SiH4 at different ratios, instead of CH4, SiH4 and the appropriate dopant which were employed for the other p‐ and n‐ a‐SiC:H layers, into the chamber of plasma‐enhanced chemical vapor deposition (PECVD) system. It is observed that the Electroluminescence (EL) spectra have a blue‐shift for those TFLED's with HTI‐layer embedded at the p‐i interface. Experimentally, for TFLED's with p/HTI/i/HTI/n or p/HTI/i/n structure, visible orange light emission was observed, but, for those with p/i/HTI/n structure, a red one was noticed, at room temperature.

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