Schottky barrier heights on p-type diamond and silicon carbide (6h)
- 6 September 1976
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 58 (4) , 249-251
- https://doi.org/10.1016/0375-9601(76)90088-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Microscopic theory of covalent-ionic transition at metal-semiconductor interfacesSolid State Communications, 1973
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969
- Surface-Barrier Diodes on Silicon CarbideJournal of Applied Physics, 1968
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Theory of Surface StatesPhysical Review B, 1965