Negative differential resistance in GaAs MESFETs
- 18 August 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (17) , 649-650
- https://doi.org/10.1049/el:19830441
Abstract
The occurrence of stationary domains and negative differential resistance in GaAs MESFETs is shown to be favoured for a certain range of combinations of pinch-off voltage, gate voltage and saturation voltage. Outside this range the transistor either shows instability or normal JFET behaviour. The predictions are in good agreement with available experimental data.Keywords
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