THE INFLUENCE OF X-RAY DAMAGE ON ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS CAPACITORS

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Abstract
The radiation response of MOS capacitors and their degradation resistance after annealing has been investigated. Compared to unexposed samples, irradiated and subsequently annealed MOS capacitors were found to be more prone to electron-induced interface degradation. The enhanced degradation correlates with the initial radiation damage and is lowest in TaSi2 silicide gates. To which extent hydrogen contamination of the oxide or mechanical strain may account for the observed results will be discussed

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