A GaAs LD Driver IC for a 2.5 Gb/s Optical Communication System
- 1 September 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1649-1654
- https://doi.org/10.1109/euma.1994.337455
Abstract
A large modulation current laser-diode (LD) driver IC is developed using a GaAs self-aligned gate MESFET with a 0.8 μm gate length for a 2.5 Gb/s optical communication system. The IC consists of a level shifter, a two-stage input buffer, a mark density monitor and a current driver. The current driver adjusts the modulation current over 50 mA p-p for a 25 Ω load using a current mirror circuit. The rise and fall times are 90 ps and 110 ps, respectively. This IC also has small deviation of ±0.2% of the modulation current for the ambient temperature from -20 °C to 80 °C. The dispersion penalty of a 100 km length transmission using 1.3 μm zero-dispersion fiber with an optical transmitter consisting of this IC and a MQW DFB LD is less than 0.8 dB. The IC is suitable for the practical application to 2.5 Gb/s optical communication systems.Keywords
This publication has 3 references indexed in Scilit:
- A 1.9-GHz-band GaAs direct-quadrature modulator IC with a phase shifterIEEE Journal of Solid-State Circuits, 1993
- An ultra-broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication systemIEEE Transactions on Microwave Theory and Techniques, 1992
- A 1GHz-2mA/5V GaAs 128/129 Prescaler ICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987