Electron damage in Cu3Au
- 1 November 1982
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 46 (5) , 717-721
- https://doi.org/10.1080/01418618208236926
Abstract
Ordered and disordered Cu3Au have been electron irradiated along over the temperature range 125–300 K in an H.V.E.M. The onset of structural changes has been monitored by using both the diffraction pattern to detect changes in the degree of order, and image information to observe clustered defects. It has been found that the threshold voltage for disordering an initially ordered sample is 325 kV, whereas only 305 kV is required to order an initially disordered sample. In contrast, it has been found that 355 kV is required to generate visible damage in an initially ordered sample, and 375 kV in an initially disordered sample. The significance of these results is discussed in terms of the displacement of copper atoms by the high-energy electrons.Keywords
This publication has 4 references indexed in Scilit:
- H.V.E.M. study of ordering and disordering in Cu3AuPhilosophical Magazine A, 1982
- The radiation-induced order-disorder transformation in Cu3AuPhilosophical Magazine A, 1980
- An investigation of the temperature dependence of the threshold energy for atom displacement in electron-irradiated copperPhysics Letters A, 1980
- The radiation disorder model of phase stabilityJournal of Nuclear Materials, 1979