Thermally activated dislocation sources in silicon
- 30 October 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (30) , L847-L849
- https://doi.org/10.1088/0022-3719/13/30/005
Abstract
Single and double pole dislocation sources are observed to operate in silicon single crystals during in situ straining. This operation is controlled by the lattice friction on segments lying along the (110) directions of the (111) slip plane, and leads to a highly heterogeneous slip.Keywords
This publication has 2 references indexed in Scilit:
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956