Electrical conductivity in n-type InSb as a function of magnetic field at3He temperatures
- 31 August 1971
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 4 (12) , 1570-1575
- https://doi.org/10.1088/0022-3719/4/12/015
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Magnetic freeze-out effects in n-type indium antimonideJournal of Physics C: Solid State Physics, 1970
- Magnetic freeze-out in n-type indium antimonide and evidence for a donor impurity band in zero magnetic fieldJournal of Physics C: Solid State Physics, 1969
- Localization of Electrons in Impure Semiconductors by a Magnetic FieldReviews of Modern Physics, 1968
- Magnetic field dependent impurity states in n-type InSbJournal of Physics C: Solid State Physics, 1968
- Electron Shielding in-InSbPhysical Review B, 1967
- Magnetic-Field-Induced Mott Transition in SemiconductorsPhysical Review B, 1967
- Helium-3 cryostat with adsorption pumpCryogenics, 1967
- 3He Cryostat with Adsorption PumpingReview of Scientific Instruments, 1965
- Impurity photoconductivity in n-type InSbJournal of Physics and Chemistry of Solids, 1961
- Impurity Photoconductivity in n-type InSbProceedings of the Physical Society, 1960