Two-dimensional Shubnikov–de Haas oscillations in modulation-doped CdTe/CdMnTe quantum-well structures
- 7 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (23) , 3010-3012
- https://doi.org/10.1063/1.109173
Abstract
For the first time clear evidence for two-dimensional Shubnikov–de Haas oscillations in modulation-doped CdTe/CdMnTe quantum-well structures is reported. The structures were grown by molecular-beam epitaxy using ZnBr2 as a novel source material for the n-type doping of II-VI epitaxial layers. From an analysis of the Shubnikov–de Haas oscillations a carrier density of 9×1011 cm−2 and an effective mass of 0.1 m0 could be deduced. Due to band filling the Fermi energy in the subbands is shifted above the conduction-band edge. This can be detected as a Stokes shift of absorption compared to photoluminescence recombination. From the Fermi energy shift the carrier concentration can be estimated, which agrees well with values determined by Hall-effect measurements.Keywords
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