22 GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure
- 1 January 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (12) , 1140-1142
- https://doi.org/10.1049/el:19920719
Abstract
A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahigh-speed photodiode with an input waveguide. The SiO2 sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.Keywords
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