High Resolution Silicon Detectors for Photons and Particles

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Abstract
Concepts and examples are presented of modern silicon sensors for high resolution photon and particle detection. All the devices are derived from the reverse biased diode as the basic element. They are produced by planar technology on high resistivity material so the whole wafer thickness up to 300 µm serves as sensitive volume. As a first example the Silicon Strip detectors are described. They are already applied successfully as particle counters with high position resolution in high energy physics and are foreseen to have medical applications. Introducing the principle of sideward depletion allows more sophisticated detectors. Its primary development is the Silicon Drift Chamber. That detector type has another interesting feature: as the capacitance of the readout anode is small and independent of the detector area the integration of the first amplifying stage on the detector wafer provides a noise level close to 1 e-(rms). In this way the monolithic integration of sensors and readout electronics allows high resolution (position, energy and time) measurements with compact systems at room and low temperatures. For example, the use of Silicon Drift Chambers in portable system as multipurpose radiation counters is outlined. As a last step in the complexity pn-CCDs are introduced as light, UV and X ray detectors in various applications.

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