Laser beam shaping system for semiconductor processing
- 1 March 1992
- journal article
- Published by Elsevier in Optics Communications
- Vol. 88 (1) , 59-62
- https://doi.org/10.1016/0030-4018(92)90309-f
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TftsMRS Proceedings, 1986
- Gaussian to flat-top intensity distributing lensOptics & Laser Technology, 1982
- Laser beam profile shaping with binary diffraction gratingsOptics Communications, 1981
- Acousto-optic intensity modification of a gaussian laser beamOptics Communications, 1981
- Macroscopic theory of pulsed-laser annealing. II. Dopant diffusion and segregationPhysical Review B, 1981
- Method for converting a Gaussian laser beam into a uniform beamOptics Communications, 1981
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- Efficient Si solar cells by laser photochemical dopingApplied Physics Letters, 1981
- Apodizing of intense laser beams with saturable dyesOptics Communications, 1979
- Noise elimination technique in holographyApplied Optics, 1976