Shot noise behaviour of subthreshold MOS transistors

Open Access

1 January 1978

journal article
Published by EDP Sciences in Revue de Physique Appliquée

Vol. 13 (12) , 719-723
https://doi.org/10.1051/rphysap:019780013012071900

Abstract

It is shown that assuming weak inversion, low drain current asymptotic value of the gate equivalent noise resistor is given by n2/2 UT/ID, corresponding to shot noise. Measurements confirming this theory as well as flicker noise measurements on n and p channel transistors integrated with either bulk or SOS CMOS silicon gate technology are presented

Keywords

SUBTHRESHOLD MOS
MOS TRANSISTORS
SHOT NOISE
NOISE BEHAVIOUR
BEHAVIOUR OF SUBTHRESHOLD

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