Oscillatory magnetoresistance of heavily doped semiconductors at low temperatures
- 13 November 1973
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 6 (22) , 3275-3281
- https://doi.org/10.1088/0022-3719/6/22/013
Abstract
It is suggested that only far above the band edge does the magnetoresistance exhibit an oscillatory behaviour; below the band edge the magnetoresistance in the high-field regime is considered, and near the band edge the slope of the magnetoresistance in a weak magnetic field is discussed.Keywords
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